IRF2204LPBF International Rectifier, IRF2204LPBF Datasheet - Page 6

• Manufacturer Part Number: IRF2204LPBF
• Description: MOSFET N-CH 40V 170A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2204LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 170A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 200 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 130 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF2204LPBF

IRF2204S/LPbF
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V DS
Same Type as D.U.T.
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
.3 F
D.U.T
0.01
L
I
G
Charge
Q
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
900
750
600
450
300
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
25
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
Starting Tj, Junction Temperature
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
I D = 250µA
50
100
75 100 125 150 175 200
TOP
BOTTOM
125
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( C)
°
150
130A
52A
91A
I D
175