IRF2204LPBF International Rectifier, IRF2204LPBF Datasheet - Page 2

• Manufacturer Part Number: IRF2204LPBF
• Description: MOSFET N-CH 40V 170A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF2204LPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 130A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 170A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 200 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 130 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF2204LPBF

IRF2204S/LPbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
I
I
I
I
V
t
Q
t
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
DSS
GSS
S
SM
rr
on
d(on)
r
d(off)
f
2
V
fs
D
S
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
(BR)DSS
eff.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Effective Output Capacitance …
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.041 –––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
40
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
5890 –––
1570 –––
8000 –––
1370 –––
2380 –––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
––– -200
130
140
110
130
3.0
68
35
39
15
62
170†
–––
100
180
–––
–––
250
200
200
–––
–––
–––
–––
–––
–––
1.3
3.6
4.0
850
20
52
59
V/°C
m
nH
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 130A
= 130A
= 25°C, I
= 25°C, I
= 2.5
= 0V, I
= 10V, I
= 10V, I
= 10V, I
= 40V, V
= 32V, V
= 20V
= -20V
= 32V
= 10V„
= 20V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
= 130A
Conditions
= 130A, V
= 250µA
= 130A
= 130A „
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
= 150°C
G
= 0V „
G
S
+L
D
D
S
)
S
D