IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet - Page 5

• Manufacturer Part Number: IRLIB9343PBF
• Description: MOSFET P-CH 55V 14A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLIB9343PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB Full-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLIB9343PBF

Fig 15. Maximum Avalanche Energy Vs. Temperature
www.irf.com
Fig 12. On-Resistance Vs. Gate Voltage
600
500
400
300
200
100
200
160
120
0
80
40
0
4.0
25
1000
100
0.1
10
1
1.0E-06
Starting T J , Junction Temperature (°C)
-V GS , Gate-to-Source Voltage (V)
50
Duty Cycle = Single Pulse
6.0
TOP
BOTTOM 1% Duty Cycle
I D = -10A
75
0.01
0.05
0.10
100
Single Pulse
1.0E-05
T J = 125°C
8.0
Fig 14. Typical Avalanche Current Vs.Pulsewidth
T J = 25°C
125
I D = -14A
150
10.0
175
1.0E-04
tav (sec)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 17a, 17b.
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
1.0E-03
(assumed as 25°C in Figure 14, 15).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
1000
D (ave)
800
600
400
200
0
25
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
Starting T J , Junction Temperature (°C)
50
= P
1.0E-02
pulsewidth,
D (ave)
jmax
75
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
100
thJC
tav
125
TOP
BOTTOM
1.0E-01
jmax
150
is
-5.6A
I D
-5.0A
-10A
5
175