IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet - Page 4

• Manufacturer Part Number: IRLIB9343PBF
• Description: MOSFET P-CH 55V 14A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLIB9343PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB Full-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLIB9343PBF

Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
4
100.0
16
12
10.0
8
4
0
1.0
0.1
25
0.2
0.001
0.01
0.4
0.1
10
50
T J = 175°C
-V SD , Source-to-Drain Voltage (V)
1
1E-006
T J , Junction Temperature (°C)
0.6
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
75
0.8
T J = 25°C
0.20
0.10
0.05
0.02
0.01
1.0
100
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
1.2
125
1.4
V GS = 0V
1.6
150
0.0001
1.8
2.0
175
t 1 , Rectangular Pulse Duration (sec)
0.001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= i/Ri
0.01
R
1
R
Fig 10. Threshold Voltage vs. Temperature
1
2.5
2.0
1.5
1.0
1000
100
τ
10
2
1
R
τ
-75 -50 -25
2
2
Fig 8. Maximum Safe Operating Area
R
1
2
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
R
τ
3
-V DS , Drain-toSource Voltage (V)
3
R
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
3
3
τ
C
T J , Temperature ( °C )
τ
Ri (°C/W)
0
0.8737
0.877
2.089
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
25
1
50
2.593
0.000799
0.068578
τi (sec)
75
1msec
10msec
I D = -250µA
100µsec
100
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100 125 150 175
10
1000