IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet

IRLIB9343PBF

Manufacturer Part Number

IRLIB9343PBF

Description

MOSFET P-CH 55V 14A TO220FP

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheet

1.IRLIB9343PBF.pdf (8 pages)

Specifications of IRLIB9343PBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

105 mOhm @ 3.4A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

14A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

47nC @ 10V

Input Capacitance (ciss) @ Vds

660pF @ 50V

Power - Max

33W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

170 mOhms

Drain-source Breakdown Voltage

- 55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 14 A

Power Dissipation

33 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Fall Time

9.5 ns

Gate Charge Qg

31 nC

Minimum Operating Temperature

- 40 C

Rise Time

24 ns

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.105Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±20V

Operating Temp Range

-40C to 175C

Operating Temperature Classification

Automotive

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-220AB Full-Pak

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRLIB9343PBF

Current page: 1 of 8
Download datasheet (213Kb)

Features

Description

This Digital Audio HEXFET

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

Notes through … are on page 7

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

Amplifier Applications

Lead-Free

175°C Operating Junction Temperature for

Repetitive Avalanche Capability for Robustness and

Key Parameters Optimized for Class-D Audio

Low R

Low Q

Efficiency

Ruggedness

STG

Advanced Process Technology

Reliability

θJC

θJA

@ T

DSON

= 25°C

= 100°C

= 25°C

= 100°C

and Q

for Better THD and Lower EMI

for Improved Efficiency

for Better THD and Improved

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient

is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

Parameter

@ -10V

DS(ON)

max

typ.

typ. @ V

Key Parameters

Typ.

–––

IRLIB9343PbF

= -10V

= -4.5V

-40 to + 175

10 (1.1)

Max.

0.26

-55

-14

-10

-60

±20

TO-220 Full-Pak

Max.

3.84

150

175

-55

lbf

Units

W/°C

°C/W

in (N

°C

8/23/04

Related parts for IRLIB9343PBF

IRLIB9343PBF Summary of contents

Page 1

... Thermal Resistance Junction-to-Case R θJC Junction-to-Ambient R θJA Notes through … are on page 7 www.irf.com typ DS(ON) R typ DS(ON) Q typ max J G Parameter @ -10V GS @ -10V GS Parameter f f IRLIB9343PbF Key Parameters - -10V -4.5V 150 175 ° TO-220 Full-Pak Max. Units -55 V ±20 -14 A -10 - 0.26 W/° ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

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IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet

IRLIB9343PBF

Specifications of IRLIB9343PBF

Related parts for IRLIB9343PBF

IRLIB9343PBF Summary of contents

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