IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet - Page 3

• Manufacturer Part Number: IRLIB9343PBF
• Description: MOSFET P-CH 55V 14A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLIB9343PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB Full-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLIB9343PBF

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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100.0
10000
10.0
1000
Fig 3. Typical Transfer Characteristics
100
1.0
0.1
100
0.1
10
10
1
Fig 1. Typical Output Characteristics
0.0
0.1
1
-V GS , Gate-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
T J = 25°C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
5.0
1
-2.5V
V DS = -25V
≤ 60µs PULSE WIDTH
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
Coss
Ciss
Crss
10.0
10
TOP
BOTTOM
T J = 175°C
VGS
-15V
-12V
-10V
-8.0V
-5.5V
-4.5V
-3.0V
-2.5V
15.0
100
100
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
2.0
1.5
1.0
0.5
100
Fig 2. Typical Output Characteristics
0.1
20
16
12
10
-60 -40 -20 0
1
8
4
0
0.1
0
I D = -14A
V GS = -10V
I D = -14A
-V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
10
Q G Total Gate Charge (nC)
20 40 60 80 100 120 140 160 180
1
V DS = -44V
VDS= -28V
VDS= -11V
20
-2.5V
≤ 60µs PULSE WIDTH
Tj = 175°C
FOR TEST CIRCUIT
SEE FIGURE 19
30
10
TOP
BOTTOM
40
VGS
-15V
-12V
-10V
-8.0V
-5.5V
-4.5V
-3.0V
-2.5V
3
100
50