IRFR3504ZTRPBF International Rectifier, IRFR3504ZTRPBF Datasheet - Page 7

MOSFET N-CH 40V 42A DPAK

IRFR3504ZTRPBF

Manufacturer Part Number
IRFR3504ZTRPBF
Description
MOSFET N-CH 40V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR3504ZTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
77A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
9mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3504ZPBFTR
IRFR3504ZTRPBF
IRFR3504ZTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3504ZTRPBF
Manufacturer:
International Rectifier
Quantity:
64 748
www.irf.com
1000
100
0.1
10
1.0E-06
1
80
60
40
20
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
Vs. Temperature
0.01
0.05
0.10
75
TOP
BOTTOM 1% Duty Cycle
I D = 42A
1.0E-05
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
125
150
1.0E-04
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
1.0E-03
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
Allowed avalanche Current vs
avalanche
assuming
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
= P
D (ave)
jmax
pulsewidth,
Tj = 25°C due to
1.0E-02
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-01
7
is

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