IRFR3504ZTRPBF International Rectifier, IRFR3504ZTRPBF Datasheet

MOSFET N-CH 40V 42A DPAK

IRFR3504ZTRPBF

Manufacturer Part Number
IRFR3504ZTRPBF
Description
MOSFET N-CH 40V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR3504ZTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1510pF @ 25V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
77A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
9mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3504ZPBFTR
IRFR3504ZTRPBF
IRFR3504ZTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR3504ZTRPBF
Manufacturer:
International Rectifier
Quantity:
64 748
HEXFET
Features
Description
This HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
D
DM
AR
D
GS
AS (Thermally limited)
AS
AR
J
STG
JC
JA
JA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
IRFR3504ZPbF
D-Pak
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
10 lbf
D
S
IRFR3504ZPbF
IRFU3504ZPbF
-55 to + 175
y
Max.
in (1.1N
0.60
± 20
310
110
77
54
42
90
77
®
IRFU3504ZPbF
R
Power MOSFET
DS(on)
V
y
m)
Max.
DSS
I
1.66
I-Pak
110
D
40
= 42A
PD - 95521B
= 9.0m
= 40V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR3504ZTRPBF Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance R Junction-to-Case JC Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G D-Pak IRFR3504ZPbF Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter i ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 30µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100 ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = Ciss 1500 1000 Coss 500 ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 80 TOP Single Pulse BOTTOM 1% Duty Cycle 42A ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPLE: THIS IS AN IRFR120 WITH AS SEMBLY LOT CODE 1234 AS SEMBLED ON WW 16, 2001 IN THE ASS EMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" ssembly line position indicates "Lead-Free" qualification ...

Page 10

EXAMPLE: T HIS IS AN IRF U120 WIT H AS SEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 2001 IN THE ASS EMB LY LINE "A" Note: "P" in ass embly line pos ition indicates Lead-Free" OR Notes: 1. ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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