IRFR3504ZTRPBF International Rectifier, IRFR3504ZTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3504ZTRPBF
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3504ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 77A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR3504ZPBFTR; IRFR3504ZTRPBF; IRFR3504ZTRPBFTR

Electrical Characteristics @ T
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
V
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
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–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
32
0.032
1510
1100
8.23
–––
–––
–––
–––
–––
–––
–––
340
190
340
460
–––
–––
–––
9.6
4.5
7.5
9.2
30
12
15
74
30
38
18
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
310
9.0
4.0
1.3
20
45
42
27
14
V/°C
m
nC
nH
nC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 42A
= 42A
= 25°C, I
= 25°C, I
= 15
= 0V, I
= 10V, I
= V
= 10V, I
= 40V, V
= 40V, V
= 20V
= -20V
= 32V
= 10V
= 20V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
e
D
Conditions
Conditions
D
S
F
DS
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 42A, V
= 42A, V
= 42A
= 42A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
GS
DD
J
= 125°C
= 20V
= 0V
G
f
e
S
D