IRFR3504ZTRPBF International Rectifier, IRFR3504ZTRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR3504ZTRPBF
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR3504ZTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 77A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 9mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFR3504ZPBFTR; IRFR3504ZTRPBF; IRFR3504ZTRPBFTR

4
1000.0
100.0
2500
2000
1500
1000
10.0
500
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
0.6
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
Crss
Coss
1.0
Ciss
f = 1 MHZ
10
1.4
V GS = 0V
1.8
2.2
100
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
20
16
12
1
8
4
0
0
Fig 6. Typical Gate Charge Vs.
0
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 42A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
10
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 32V
VDS= 20V
VDS= 8.0V
20
10
FOR TEST CIRCUIT
SEE FIGURE 13
30
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100µsec
10msec
1msec
100
40
1000
50