SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet - Page 6

• Manufacturer Part Number: SI4410DYTRPBF
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 44 ns
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4410DYPBFTR; SI4410DYTRPBF; SI4410DYTRPBFTR

6
0.20
0.16
0.12
0.08
0.04
0.00
3.0
2.5
2.0
1.5
-60
0
Typical Threshold Voltage Vs.Temperature
-40
T , Junction Temperature (°C)
-20
J
10
0
I , Drain Current (A)
D
20
20
40
V
V
GS
GS
60
= 10V
= 4.5V
30
80
I
D
100 120 140 160
=250µA
40
50
A
A
1000
0.03
0.02
0.01
0.00
800
600
400
200
0
25
3
Fig 15. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
V
4
GS
50
, Gate-to-Source Voltage (V)
Vs. Drain Current
5
J
75
6
7
100
I
TOP
BOTTOM
D
www.irf.com
= 10A
8
125
9
°
4.5A
8.0A
I D
10A
150
10
A