SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet - Page 5

• Manufacturer Part Number: SI4410DYTRPBF
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 44 ns
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4410DYPBFTR; SI4410DYTRPBF; SI4410DYTRPBFTR

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10.0
8.0
6.0
4.0
2.0
0.0
0.01
100
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
100
80
60
40
20
0.1
0
0.01
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
Typical Power Vs. Time
1
J
DM
Time (sec)
x Z
1
1
thJA
P
2
DM
+ T
10
A
t
1
10
t
2
100
5
100
A