SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet - Page 3

• Manufacturer Part Number: SI4410DYTRPBF
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 44 ns
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4410DYPBFTR; SI4410DYTRPBF; SI4410DYTRPBFTR

www.irf.com
1000
100
1000
10
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
10
0.1
4
TOP
BOTTOM
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
GS
, Drain-to-Source Voltage (V)
T = -55°C
, Gate-to-Source Voltage (V)
J
1
8
4.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= 25V
12
T = 25°C
T = 150°C
J
°
J
100
16
A
1000
100
10
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
V
11A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
4.5V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
10V
100
3