SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet
SI4410DYTRPBF
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SI4410DYTRPBF
SI4410DYTRPBFTR
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SI4410DYTRPBF Summary of contents
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... Lead-Free Description ® This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on- resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...
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1MHz iss rss gd 2000 oss iss 1600 1200 C oss 800 400 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 SINGLE PULSE (THERMAL ...
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V = 10V 4.5V GS 0.04 0. Drain Current (A) D 3.0 2 2.0 1.5 -60 -40 - ...
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SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIME NS IONING ...
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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...