IRF7353D2TRPBF International Rectifier, IRF7353D2TRPBF Datasheet - Page 6

MOSFET N-CH 30V 6.5A 8-SOIC

IRF7353D2TRPBF

Manufacturer Part Number
IRF7353D2TRPBF
Description
MOSFET N-CH 30V 6.5A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7353D2TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
46 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
6.5 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7353D2PBFTR
IRF7353D2TRPBF
IRF7353D2TRPBFTR
IRF7353D2PbF
6
100
0.1
10
Fig. 12 - Typical Forward Voltage Drop
1
0.0
Forward Voltage Drop - V
0.2
Forward Voltage Drop - V
Characteristics
0.4
0.6
Schottky Diode Characteristics
T = 150°C
T = 125°C
T = 25°C
J
J
J
0.8
F
(V)
(V)
1.0
Fig.14 - Maximum Allowable Ambient
0.001
0.01
100
0.1
10
160
140
120
100
1
80
60
40
20
Reverse Current Vs. Reverse
Temp. Vs. Forward Current
0
0
Fig. 13 - Typical Values of
0.0
Average Forward Current - I
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
T = 150°C
J
0.5
5
Reverse Voltage - V (V)
125°C
100°C
1.0
75°C
50°C
25°C
Voltage
10
1.5
15
2.0
www.irf.com
V = 80% Rated
R
Square wave
2.5
20
r
thJA
R
3.0
= 62.5°C/W
F(AV)
DC
25
3.5
(A)
4.0
30
A
A

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