IRF7353D2TRPBF International Rectifier, IRF7353D2TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7353D2TRPBF
• Description: MOSFET N-CH 30V 6.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7353D2TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7353D2PBFTR; IRF7353D2TRPBF; IRF7353D2TRPBFTR

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100
0.1
10
0.0001
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(THERMAL RESPONSE)
0.001
SINGLE PULSE
100
10
Power MOSFET Characteristics
1
0.4
Fig 10. Typical Source-Drain Diode
0.01
t , Rectangular Pulse Duration (sec)
1
V
0.6
SD
T = 150°C
, Source-to-Drain Voltage (V)
J
Forward Voltage
0.8
0.1
1.0
T = 25°C
J
1.2
V
1.4
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
= 0V
1.6
J
A
DM
IRF7353D2PbF
x Z
1
thJA
P
2
10
DM
+ T
A
t
1
t
2
100
5