STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 4

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
increases from 0 to 80% V
I
C
GS(th)
DS(on)
C
Q
Q
DSS
GSS
fs
Q
oss eq.
oss
rss
iss
gs
gd
g
(1)
(2)
= 25 °C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 9509 Rev 12
V
V
V
V
V
V
(see Figure 19)
I
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= 0, V
=480 V, I
=15 V, I
= 25 V, f=1 MHz,
= 0
=10 V
=max rating,
=max rating @125 °C
= ± 20 V
= V
= 10 V, I
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
D
= 0 to 480 V
= 0.4 A
= 50 µA
= 0.8 A
= 0.4 A
= 0
STQ1NK60ZR-AP, STN1NK60Z
Min.
600
Min.
3
Typ.
3.75
Typ.
17.6
13
0.5
2.8
4.9
2.7
94
11
1
oss
Max.
Max.
±
4.5
when V
50
15
6.9
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S