STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 13

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

STQ1NK60ZR-AP, STN1NK60Z
Table 12.
delta H
delta P
F1, F2
Dim.
W0
W1
W2
H0
H1
D0
A1
T1
T2
P0
P2
W
l1
H
T
d
L
t
TO-92 ammopack mechanical data
Doc ID 9509 Rev 12
Min.
4.45
3.30
0.41
12.5
5.65
2.44
17.5
18.5
15.5
5.7
8.5
3.8
-2
-1
3
Typ.
12.7
6.35
2.54
mm
18
16
6
9
4
Package mechanical data
Max.
4.95
3.94
0.56
12.9
7.05
2.94
20.5
16.5
925
1.6
2.3
6.3
0.5
4.2
0.9
19
25
11
2
1
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