STN1NK60Z STMicroelectronics, STN1NK60Z Datasheet - Page 3

• Manufacturer Part Number: STN1NK60Z
• Description: MOSFET N-CH 600V 300MA SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STN1NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 94pF @ 25V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.3 A
• Power Dissipation: 3300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3523-2

STQ1NK60ZR-AP, STN1NK60Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu, t < 30 s.
Table 4.
V
Symbol
Symbol
dv/dt
Symbol
R
ESD(G-D)
I
SD
P
DM
R
V
V
T
thj-lead
E
T
I
I
I
TOT
thj-a
DS
GS
stg
T
AR
D
D
AS
J
(1)
≤ 0.3 A, di/dt ≤ 200 A/µs, V
l
(2)
Absolute maximum ratings
Thermal resistance
Avalanche data
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Thermal resistance junction-ambient max
Thermal resistance junction-lead max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
Parameter
DD
Parameter
Parameter
Doc ID 9509 Rev 12
= 80%V
C
D
= 25 °C
GS
= I
AR
= 0)
(BR)DSS
, V
C
C
=100 °C
DD
= 25 °C
= 50 V)
TO-92
TO-92
0.25
0.3
120
40
3
- 55 to 150
Value
0.189
Value
Value
± 30
600
800
260
1.2
4.5
0.8
60
SOT-223
SOT-223
0.26
38
Electrical ratings
0.3
3.3
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
A
V
V
A
A
A
V
3/16