PSMN2R2-40PS,127 NXP Semiconductors, PSMN2R2-40PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN2R2-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 8423pF @ 20V
• Power - Max: 306W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4898-5; 934063915127

NXP Semiconductors
PSMN2R2-40PS_2
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
junction temperature
-60
factor as a function of junction temperature
0
0
60
60
max
min
typ
120
120
003aad326
003aad280
T
T
j
j
(°C)
( ° C)
Rev. 02 — 28 September 2009
180
180
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate charge waveform definitions
(A)
N-channel 40 V 2.1 mΩ standard level MOSFET
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
gate-source voltage
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
2
I
Q
PSMN2R2-40PS
D
GS
Q
min
GS2
Q
G(tot)
typ
Q
GD
4
max
V
© NXP B.V. 2009. All rights reserved.
GS
003aaa508
(V)
03aa35
6
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