PSMN2R2-40PS,127 NXP Semiconductors, PSMN2R2-40PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN2R2-40PS,127
• Description: MOSFET N-CH 40V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R2-40PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 8423pF @ 20V
• Power - Max: 306W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 100 A
• Power Dissipation: 306 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4898-5; 934063915127

NXP Semiconductors
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN2R2-40PS_2
Product data sheet
Symbol
Source-drain diode
I
I
Avalanche ruggedness
E
S
SM
Fig 1.
DS(AL)S
(A)
I
D
300
250
200
150
100
50
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
(1)
…continued
100
Conditions
T
t
V
unclamped; R
p
mb
150
GS
≤ 10 µs; pulsed; T
= 25 °C
= 10 V; T
T
003aad125
mb
(°C)
Rev. 02 — 28 September 2009
200
j(init)
GS
= 50 Ω
= 25 °C; I
mb
= 25 °C
Fig 2.
D
= 100 A; V
P
(%)
N-channel 40 V 2.1 mΩ standard level MOSFET
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
sup
≤ 40 V;
50
PSMN2R2-40PS
100
Min
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
100
962
1.24
03aa16
(°C)
200
Unit
A
A
J
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