PSMN5R0-80PS,127 NXP Semiconductors, PSMN5R0-80PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN5R0-80PS,127
• Description: MOSFET N-CH 80V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R0-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 101nC @ 10V
• Input Capacitance (ciss) @ Vds: 6793pF @ 12V
• Power - Max: 270W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.7 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4894-5; 934063912127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN5R0-80PS_2
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
10
10
10
(A)
I
10
D
-1
-1
-2
-3
-4
3
2
1
1
10
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-1
-6
0.2
0.02
0.05
Thermal characteristics
0.1
δ = 0.5
Parameter
thermal resistance from
junction to mounting
base
single shot
10
Limit R
-5
DSon
1
= V
Conditions
see
DS
(1)
/ I
Figure 4
10
D
-4
Rev. 02 — 23 June 2009
10
10
-3
N-channel 80 V 4.7 mΩ standard level MOSFET
DC
10
-2
10
PSMN5R0-80PS
2
100 μs
1 ms
10 ms
100 ms
Min
-
10 μs
P
10
-1
Typ
0.3
V
t
p
DS
T
(V)
t
© NXP B.V. 2009. All rights reserved.
p
(s)
δ =
003aad299
003aad080
Max
0.56
T
t
p
t
10
1
3
Unit
K/W
4 of 13