PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet - Page 3

• Manufacturer Part Number: PSMN7R0-100PS,127
• Description: MOSFET N-CH 100V 100A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 6686pF @ 50V
• Power - Max: 269W
• Mounting Type: Through Hole
• Gate Charge Qg: 125 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 269 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4971-5

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN7R0-100PS_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current is limited by package
(A)
I
150
100
D
50
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
(1)
50
100
Conditions
T
T
V
V
t
T
T
t
V
V
p
p
j
j
mb
mb
150
GS
GS
GS
sup
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C;
= 10 V; T
= 10 V; T
= 10 V; T
T
= 100 V; unclamped; R
003aad558
mb
(°C)
200
Rev. 02 — 7 January 2010
j
≤ 175 °C
j
mb
mb
j(init)
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
GS
= 20 kΩ
= 100 A;
P
Figure 1
(%)
der
= 50 Ω
Figure 1
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
50
PSMN7R0-100PS
[1]
[1]
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
Max
100
100
20
85
100
475
269
175
175
260
100
475
315
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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