PSMN012-80PS,127 NXP Semiconductors, PSMN012-80PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN012-80PS,127
• Description: MOSFET N-CH 80V 74A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2782pF @ 12V
• Power - Max: 148W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 74 A
• Power Dissipation: 148 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4902-5; 934063911127

NXP Semiconductors
PSMN012-80PS_2
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
2.5
2.0
1.5
1.0
0.5
0.0
(V)
a
10
GS
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
-30
10
0
V
DS
30
20
= 40 V
60
30
90
120
40
003aad033
003aad045
Q
150
G
T
(nC)
j
(°C)
180
50
Rev. 02 — 25 June 2009
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
N-channel 80 V 11 mΩ standard level MOSFET
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN012-80PS
GS
Q
GS2
C
C
C
iss
oss
Q
rss
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003aad034
(V)
10
2
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