PSMN012-80PS,127 NXP Semiconductors, PSMN012-80PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN012-80PS,127
• Description: MOSFET N-CH 80V 74A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 2782pF @ 12V
• Power - Max: 148W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 74 A
• Power Dissipation: 148 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4902-5; 934063911127

NXP Semiconductors
PSMN012-80PS_2
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
120
(S)
100
g
−1
−2
−3
−4
−5
−6
fs
80
60
40
20
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
2
40
min
60
typ
4
max
V
80
GS
003aad036
I
(V)
D
03aa35
(A)
100
6
Rev. 02 — 25 June 2009
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(V)
R
(mΩ)
N-channel 80 V 11 mΩ standard level MOSFET
25
DSon
20
15
10
5
5
4
3
2
1
0
−60
of gate-source voltage; typical values
junction temperature
0
5
0
PSMN012-80PS
10
60
max
min
typ
120
15
© NXP B.V. 2009. All rights reserved.
V
003aad038
003aad280
T
GS
j
(°C)
(V)
180
20
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