PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
PSMN1R2-25YL_1
Product data sheet
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
0.2
Rev. 01 — 25 June 2009
T
j
0.4
= 150 °C
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
0.6
0.8
003aad133
25 °C
V
SD
(V)
1
PSMN1R2-25YL
© NXP B.V. 2009. All rights reserved.
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