PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN1R2-25YL_1
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN1R2-25YL
Symbol
S
S
S
G
D
Pinning information
Ordering information
Package
Name
LFPAK2
Description
source
source
source
gate
drain
Table 1.
[1]
Symbol Parameter
Static characteristics
R
DSon
Continuous current is limited by package.
drain-source
on-state resistance
Description
Plastic single-ende surface-mounted package (LFPAK2); 4 leads
Quick reference
Rev. 01 — 25 June 2009
…continued
Conditions
V
T
V
T
j
j
GS
GS
= 100 °C; see
= 25 °C; see
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Simplified outline
= 10 V; I
= 10 V; I
1
D
D
(LFPAK2)
SOT1023
= 15 A;
= 15 A;
Figure 10
2
Figure 11
3
4
PSMN1R2-25YL
Graphic symbol
Min
-
-
Typ
-
0.9
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
1.6
1.2
D
Version
SOT1023
S
Unit
mΩ
mΩ
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