PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 7

• Manufacturer Part Number: PH8230E,115
• Description: MOSFET N-CH 30V 67A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH8230E,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2350-2; 934057745115; PH8230E T/R

NXP Semiconductors
PH8230E_4
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
100
10
75
50
25
8
6
4
0
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
2.9 V
3 V
2
3.1 V
10
4
3.2 V
6
V
20
GS
= 3.5 V
Q
10 V
8
003aaa373
003aaa376
G
4 V
I
D
(nC)
(A)
Rev. 04 — 17 November 2009
10
30
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
C
10
10
10
1.5
0.5
2
1
0
4
3
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
N-channel TrenchMOS logic level FET
0
1
60
10
120
PH8230E
V
© NXP B.V. 2009. All rights reserved.
DS
003aaa374
T
j
C
C
C
(V)
( ° C)
03aa27
oss
iss
rss
180
10
2
7 of 12