PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet

MOSFET N-CH 30V 67A LFPAK

PH8230E,115

Manufacturer Part Number
PH8230E,115
Description
MOSFET N-CH 30V 67A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PH8230E,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
62.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0082 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2350-2
934057745115
PH8230E T/R
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
Notebook computers
PH8230E
N-channel TrenchMOS logic level FET
Rev. 04 — 17 November 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; see
Figure 1
= 25 °C; V
= 25 °C; see
= 5 V; I
= 10 V; I
D
j
D
and
≤ 150 °C
= 20 A; V
GS
= 10 A;
Figure 11
Figure 9
3
Figure 2
= 10 V;
DS
Simple gate drive required due to low
gate charge
Portable equipment
Switched-mode power supplies
and
10 V;
10
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
5
7.6
Max
30
67
62.5
-
8.2
Unit
V
A
W
nC
mΩ

Related parts for PH8230E,115

PH8230E,115 Summary of contents

Page 1

PH8230E N-channel TrenchMOS logic level FET Rev. 04 — 17 November 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PH8230E LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads 4 ...

Page 3

... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature (A) Limit −1 10 −1 10 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PH8230E_4 Product data sheet 03aa23 120 P der (%) 150 200 0 T (°C) mb Fig 2 ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 0.02 single pulse −1 10 − Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors ( 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) −3 10 min typ −4 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PH8230E_4 Product data sheet 003aaa371 ( 3 3 2.9 V 2. (V) DS Fig 6. Transfer characteristics: drain current as a function of gate-source voltage ...

Page 7

... NXP Semiconductors 100 2 3 DSon (mΩ Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( Fig 11. Gate-source voltage as a function of gate charge; typical values PH8230E_4 Product data sheet 003aaa373 − (A) D Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...

Page 8

... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PH8230E_4 Product data sheet ( 150 ° 0.2 0.4 0.6 0.8 Rev. 04 — 17 November 2009 PH8230E N-channel TrenchMOS logic level FET 003aaa375 25 ° (V) SD © NXP B.V. 2009. All rights reserved. ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended surface-mounted package (LFPAK); 4 leads 1/2 DIMENSIONS (mm are the original dimensions) UNIT 1.20 0.15 1.10 0.50 mm 0.25 1.01 0.00 0.95 0.35 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT669 Fig 14 ...

Page 10

... Revision history Document ID Release date PH8230E_4 20091117 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PH8230E-03 20040302 PH8230E-02 20030429 PH8230E-01 ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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