PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 6

• Manufacturer Part Number: PH8230E,115
• Description: MOSFET N-CH 30V 67A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH8230E,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2350-2; 934057745115; PH8230E T/R

NXP Semiconductors
PH8230E_4
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
D
I
10
10
10
10
D
10
−2
−5
8
6
4
2
0
−3
−4
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.5
min
10 V
4 V
1
1
typ
2
V
max
1.5
GS
V
GS
= 3.2 V
V
003aaa371
DS
3.1 V
2.8V
2.9 V
03am28
(V)
3 V
(V)
Rev. 04 — 17 November 2009
2
3
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
10
3
2
8
6
4
2
0
0
1
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
1
N-channel TrenchMOS logic level FET
0
T
2
j
= 150 °C
60
max
min
typ
3
25 °C
120
PH8230E
© NXP B.V. 2009. All rights reserved.
V
GS
T
003aaa372
003aaa414
j
(°C)
(V)
180
4
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