PSMN012-60YS,115 NXP Semiconductors, PSMN012-60YS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN012-60YS,115
• Description: MOSFET N-CH 60V 59A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-60YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 1685pF @ 30V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Gate Charge Qg: 28.4 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4977-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN012-60YS_1
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GSth
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
and
I
I
see
V
V
V
V
V
see
V
see
V
f = 1 MHz
I
see
I
I
see
I
see
I
see
V
V
see
V
R
D
D
D
D
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 30 A; V
= 0 A; V
= 30 A; V
= 30 A; V
= 30 A; V
All information provided in this document is subject to legal disclaimers.
11
Figure 11
Figure 12
Figure 12
Figure 14
Figure 14
Figure 14
Figure 14
Figure 16
= 60 V; V
= 60 V; V
= 30 V; see
= 30 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
DS
DS
DS
DS
Rev. 01 — 5 January 2010
DS
DS
DS
D
D
D
= 0 V; V
GS
GS
GS
DS
L
GS
GS
and
and
and
DS
= V
= V
= V
= 15 A; T
= 15 A; T
= 15 A; T
= 30 V; V
= 30 V; V
= 30 V; V
= 30 V; V
= 1 Ω; V
Figure 14
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
15
15
15
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
; T
; T
; T
GS
j
j
j
GS
j
j
j
GS
GS
GS
GS
= 25 °C; see
= -55 °C; see
= 175 °C;
= 10 V
j
j
j
= 175 °C;
= 100 °C;
= 25 °C; see
j
j
j
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
and
= 10 V;
= 10 V;
= 10 V;
= 10 V;
= 10 V;
15
j
= 25 °C;
Figure 10
Figure 11
Figure 13
PSMN012-60YS
Min
54
60
2
-
0.95
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.03
-
2
2
17
-
8
0.66
28.4
23.3
8.75
4.9
3.9
6.4
4.8
1685
245
140
15.2
12.6
28.7
8.2
© NXP B.V. 2010. All rights reserved.
Max
-
-
4
4.6
-
2
50
100
100
25.5
17.8
11.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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