PSMN012-60YS,115 NXP Semiconductors, PSMN012-60YS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN012-60YS,115
• Description: MOSFET N-CH 60V 59A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-60YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 1685pF @ 30V
• Power - Max: 89W
• Mounting Type: Surface Mount
• Gate Charge Qg: 28.4 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4977-2

NXP Semiconductors
PSMN012-60YS_1
Product data sheet
Fig 3.
(A)
I
10
D
10
10
10
-1
3
2
1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 01 — 5 January 2010
N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
100 μ s
1ms
10ms
100ms
t
p
= 10 μs
10
2
PSMN012-60YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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