PSMN9R0-30YL,115 NXP Semiconductors, PSMN9R0-30YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN9R0-30YL,115
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 17.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1006pF @ 12V
• Power - Max: 46W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 61 A
• Power Dissipation: 46 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4687-2; 934063067115; PSMN9R0-30YL T/R

NXP Semiconductors
PSMN9R0-30YL
Product data sheet
Fig 1.
Fig 3.
10
(A)
I
10
10
D
(A)
I
10
80
60
40
20
D
-1
3
2
1
0
10
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
100
Limit R
150
T mb (°C)
All information provided in this document is subject to legal disclaimers.
DSon
003aac545
1
= V
DS
200
/ I
Rev. 04 — 9 March 2011
D
N-channel 30 V 8 mΩ logic level MOSFET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
PSMN9R0-30YL
100
V
DS
100 μs
1 ms
10 ms
100 ms
(V)
10 μs
150
© NXP B.V. 2011. All rights reserved.
T
003aac547
mb
03aa16
(°C)
10
200
2
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