IRF830ASPBF Vishay, IRF830ASPBF Datasheet
IRF830ASPBF
Specifications of IRF830ASPBF
Related parts for IRF830ASPBF
IRF830ASPBF Summary of contents
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... I PAK D PAK (TO-262) (TO-263 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF830ASPbF Lead (Pb)-free SiHF830AS-E3 IRF830AS SnPb SiHF830AS Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a, e Pulsed Drain Current Linear Derating Factor b, e Single Pulse Avalanche Energy ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL 4 µs Pulse Width ° 91062_03 4 µs Pulse Width T = 150 ° 91062_04 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ° 150 C J ° µs Pulse Width 0.1 4.0 5.0 6.0 7 ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91062_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 250 100 Total Gate Charge (nC) 91062_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91062_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL 125 150 - Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix 500 400 300 200 100 100 Starting T , Junction Temperature (°C) 91062_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 790 I D Top 2.2 A 3.2 A Bottom 5.0 A 785 ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91062. Document Number: 91062 S-81352-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...