IRF830ASPBF Vishay, IRF830ASPBF Datasheet - Page 4

• Manufacturer Part Number: IRF830ASPBF
• Description: MOSFET N-CH 500V 5A D2PAK
• Manufacturer: Vishay

Specifications of IRF830ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF830ASPBF

IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
www.vishay.com
4
91062_05
91062_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
20
16
12
8
4
0
4
3
2
1
1
0
I
D
= 5.0 A
V
4
DS ,
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
10
8
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
12
= 0 V, f = 1 MHz
= C
= 250 V
= C
= C
V
gs
gd
ds
DS
+ C
+ C
10
16
= 400 V
2
gd
gd
For test circuit
see figure 13
, C
ds
C
C
C
iss
oss
rss
20
Shorted
10
24
3
91062_07
91062_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
0.1
0.1
10
10
Fig. 8 - Maximum Safe Operating Area
1
2
1
2
0.2
10
T
T
Single Pulse
C
J
= 150 °C
= 25 °C
V
V
DS
SD
0.4
T
Operation in this area limited
, Drain-to-Source Voltage (V)
J
, Source-to-Drain Voltage (V)
= 150
10
2
0.6
°
C
by R
DS(on)
S-81352-Rev. A, 16-Jun-08
T
Document Number: 91062
0.8
J
10
100
1
10
= 25
ms
10
µs
ms
µs
3
°
C
1.0
V
GS
= 0 V
10
1.2
4