IRF830AS Vishay, IRF830AS Datasheet
IRF830AS
Specifications of IRF830AS
Related parts for IRF830AS
IRF830AS Summary of contents
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... 1.6 mm from case. e. Uses SiHF830A data and test conditions containing terminations are not RoHS compliant, exemptions may apply Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 1.40 • Improved Gate, Avalanche and Dynamic dV/dt ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Top 8 6.0 V 5.5 V 5.0 V Bottom 4 0 Drain-to-Source Voltage ( 91062_02 Fig Typical Output Characteristics Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL 4 µs Pulse Width ° 91062_03 4 µs Pulse Width T = 150 ° 91062_04 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91062_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 5 250 100 Total Gate Charge (nC) 91062_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91062_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Single Pulse (Thermal Response 91062_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL 125 150 - Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U.T. R ...
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... IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix 500 400 300 200 100 100 Starting T , Junction Temperature (°C) 91062_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 790 I D Top 2.2 A 3.2 A Bottom 5.0 A 785 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91062. Document Number: 91062 S-81352-Rev. A, 16-Jun-08 IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...