SI1488DH-T1-E3 Vishay, SI1488DH-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1488DH-T1-E3
• Description: MOSFET N-CH 20V 6.1A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1488DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.01nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1488DH-T1-E3TR

Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73788.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
0.2
0.02
0.05
0.05
0.1
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
A
= 25 °C, unless otherwise noted
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
A
t
1
1
= P
S10-0792-Rev. D, 05-Apr-10
t
2
Document Number: 73788
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 100 ° C/W
600
10