SI1488DH-T1-E3 Vishay, SI1488DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1488DH-T1-E3
• Description: MOSFET N-CH 20V 6.1A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1488DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.01nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1488DH-T1-E3TR

TYPICAL CHARACTERISTICS T
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
0.03
0.09
0.08
0.07
0.06
0.05
0.04
20
15
10
5
0
0.0
5
4
3
2
1
0
0
0
I
D
= 4.6 A
On-Resistance vs. Drain Current
0.6
4
V
DS
Output Characteristics
2
V
Q
- Drain-to-Source Voltage (V)
GS
g
I
- Total Gate Charge (nC)
D
= 1.8 V
Gate Charge
1.2
V
- Drain Current (A)
8
V
GS
DS
= 5 V thru 2.5 V
V
= 10 V
GS
V
4
V
GS
GS
= 1.5 V
1.8
V
12
= 1 V
DS
= 2.5 V
A
= 16 V
= 25 °C, unless otherwise noted
V
GS
6
2.4
V
16
= 4.5 V
GS
= 2 V
3.0
20
8
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Transfer Characteristics Curves vs. Temperature
5
4
3
2
1
0
- 50
0
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
T
J
0.4
= 125 ° C
4
V
V
GS
0
T
DS
J
T
C
- Junction Temperature (°C)
J
- Gate-to-Source Voltage (V)
iss
- Drain-Source Voltage (V)
= 25 ° C
V
V
25
GS
GS
Capacitance
0.8
8
= 2.5 V, I
= 1.8 V, I
50
Vishay Siliconix
C
oss
1.2
D
D
V
T
12
GS
75
= 4.3 A
= 3.9 A
Si1488DH
J
= - 55 ° C
= 4.5 V, I
www.vishay.com
100
1.6
16
D
125
= 4.6 A
150
2.0
20
3