SI1488DH-T1-E3 Vishay, SI1488DH-T1-E3 Datasheet

MOSFET N-CH 20V 6.1A SC70-6

SI1488DH-T1-E3

Manufacturer Part Number
SI1488DH-T1-E3
Description
MOSFET N-CH 20V 6.1A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1488DH-T1-E3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 4.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.1A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
0.01nC @ 5V
Input Capacitance (ciss) @ Vds
530pF @ 10V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
N Channel
Continuous Drain Current Id
6.1A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
65mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
950mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1488DH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1488DH-T1-E3
Manufacturer:
IDT
Quantity:
689
Part Number:
SI1488DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1488DH-T1-E3
Quantity:
70 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
20
(V)
Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)
G
D
D
C
0.049 at V
0.056 at V
0.065 at V
= 25 °C.
1
2
3
SC-70 (6-LEADS)
R
DS(on)
SOT-363
Top View
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
J
a
Si1488DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 150 °C)
b, d
6
5
4
N-Channel 20 V (D-S) MOSFET
a
D
D
S
I
D
6.1
5.7
5.3
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
T
T
L = 0.1 mH
T
T
T
T
T
T
T
T
Steady State
6.0
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
t ≤ 5 s
AG XX
Part # Code
Symbol
T
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
J
V
Symbol
V
E
I
I
P
, T
DM
I
AS
I
GS
R
R
DS
AS
D
S
D
thJA
thJF
Definition
stg
g
and UIS Tested
®
Typical
Power MOSFET
60
34
- 55 to 150
4.6
3.7
1.3
1.5
1.0
Limit
± 8
6.1
4.9
2.3
2.8
1.8
20
20
10
5
b, c
b, c
b, c
b, c
b, c
Maximum
G
80
45
N-Channel MOSFET
Vishay Siliconix
Si1488DH
D
S
www.vishay.com
°C/W
Unit
mJ
°C
Unit
W
V
A
A
1

Related parts for SI1488DH-T1-E3

SI1488DH-T1-E3 Summary of contents

Page 1

... V GS SOT-363 SC-70 (6-LEADS Top View Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free) Si1488DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current ...

Page 2

... Si1488DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73788 S10-0792-Rev. D, 05-Apr- °C, unless otherwise noted 1 1.8 2.4 3 Si1488DH Vishay Siliconix ° 125 ° ° 0.0 0.4 0.8 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temperature 800 600 C iss 400 200 ...

Page 4

... Si1488DH Vishay Siliconix TYPICAL CHARACTERISTICS 150 °C J 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0 250 µA D 0.6 0.4 0.2 0 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted A 0.12 0. °C J 0.06 0.03 0.00 0.8 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73788 S10-0792-Rev. D, 05-Apr- °C, unless otherwise noted A 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si1488DH Vishay Siliconix 3.5 2.8 2.1 1.4 0.7 0 ...

Page 6

... Si1488DH Vishay Siliconix TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords