SI1488DH-T1-E3 Vishay, SI1488DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1488DH-T1-E3
• Description: MOSFET N-CH 20V 6.1A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1488DH-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 4.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.1A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.01nC @ 5V
• Input Capacitance (ciss) @ Vds: 530pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1488DH-T1-E3TR

TYPICAL CHARACTERISTICS T
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73788
S10-0792-Rev. D, 05-Apr-10
8
6
4
2
0
0
Package Limited
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
A
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
= 25 °C, unless otherwise noted
125
150
3.5
2.8
2.1
1.4
0.7
0.0
0
25
T
C
50
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
Si1488DH
100
www.vishay.com
125
150
5