NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 9

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NTMD2C02R2SG

Manufacturer Part Number
NTMD2C02R2SG
Description
MOSFET N/P-CH COMPL 20V 8-SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTMD2C02R2SG

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A, 3.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1100pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.001
0.01
0.1
10
1.0E−05
1
D = 0.5
0.02
0.05
0.01
0.1
SINGLE PULSE
0.2
1.0E−04
1.0E−03
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 25. Diode Reverse Recovery Waveform
I
S
Figure 24. Thermal Response
t
p
1.0E−02
http://onsemi.com
di/dt
t
a
t, TIME (s)
Chip
9
1.0E−01
t
rr
t
b
I
S
0.0175 W
0.0154 F
0.25 I
S
1.0E+00
0.0854 F
0.0710 W
Normalized to qja at 10s.
TIME
0.2706 W
0.3074 F
1.0E+01
1.7891 F
0.5776 W
1.0E+02
0.7086 W
107.55 F
Ambient
1.0E+03

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