NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 6

• Manufacturer Part Number: NTMD2C02R2SG
• Description: MOSFET N/P-CH COMPL 20V 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2C02R2SG

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A, 3.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
2500
2000
1500
1000
5
4
3
2
1
0
100
500
10
0
0
Drain−To−Source Voltage versus Total Charge
Q1
1
10
V
I
V
D
C
C
DS
GS
t
t
rss
iss
d(on)
= 4.0 A
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
d(off)
Figure 13. Capacitance Variation
V
Figure 17. Resistive Switching Time
= 16 V
= 4.5 V
DS
Variation versus Gate Resistance
Figure 15. Gate−To−Source and
t
t
V
r
f
5
Q
DS
Q2
4
g
R
, TOTAL GATE CHARGE (nC)
= 0 V
G
, GATE RESISTANCE (OHMS)
V
GS
C
QT
rss
0
VOLTAGE (VOLTS)
V
V
DS
GS
N−Channel
8
= 0 V
10
5
V
GS
10
I
V
V
T
D
12
DS
GS
J
= 6 A
= 25°C
= 16 V
= 4.5 V
T
J
15
= 25°C
http://onsemi.com
C
C
16
oss
iss
20
16
12
8
4
0
100
20
6
5
4
3
2
1
0
1000
1500
1200
100
0
900
600
300
10
Q1
0
Drain−To−Source Voltage versus Total Charge
1.0
10
V
I
V
D
DD
GS
2
Figure 18. Resistive Switching Time
= −1.2 A
Figure 14. Capacitance Variation
Variation versus Gate Resistance
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
C
C
= −10 V
= −2.7 V
rss
Q
iss
Figure 16. Gate−To−Source and
g
5
, TOTAL GATE CHARGE (nC)
Q2
R
4
G,
−V
V
QT
GATE RESISTANCE (OHMS)
DS
GS
V
DS
VOLTAGE (VOLTS)
6
0
−V
= 0 V
P−Channel
DS
10
8
t
5
t
d (on)
d (off)
t
V
V
r
GS
GS
10
= 0 V
10
I
D
T
J
= −2.4 A
= 25°C
12
t
f
T
C
C
C
J
oss
rss
15
iss
= 25°C
14
20
18
16
14
12
10
8
6
4
2
0
100
20