NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet - Page 2
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NTMD2C02R2SG
Manufacturer Part Number
NTMD2C02R2SG
Description
MOSFET N/P-CH COMPL 20V 8-SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD2C02R2.pdf
(12 pages)
Specifications of NTMD2C02R2SG
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A, 3.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1100pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
ELECTRICAL CHARACTERISTICS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Drain−to−Source On−Resistance
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
DS
GS
GS
GS
GS
DS
DS
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= ± 12 Vdc, V
= V
= 4.5 Vdc, I
= 4.5 Vdc, I
= 2.7 Vdc, I
= 2.7 Vdc, I
= 2.5 Vdc, I
= 2.5 Vdc, I
GS
, I
D
D
= 250 mAdc)
DS
DS
D
D
= 250 mAdc)
D
D
D
D
DS
= 2.0 Adc)
= 1.0 Adc)
= 4.0 Adc)
= 2.4 Adc)
= 2.0 Adc)
= 1.2 Adc)
= 20 Vdc)
= 12 Vdc)
Characteristic
= 0)
(V
(V
(V
(V
(V
(V
(V
DS
DS
DD
DD
DS
DS
DS
(T
= 6.0 Vdc, I
= 10 Vdc, V
= 10 Vdc, I
= 16 Vdc, I
= 10 Vdc, I
= 16 Vdc, I
= 10 Vdc, I
V
V
A
V
V
V
V
f = 1.0 MHz)
GS
GS
GS
R
GS
R
GS
R
GS
R
= 25°C unless otherwise noted) (Note 3)
G
G
G
G
= 4.5 Vdc,
= 2.7 Vdc,
= 4.5 Vdc,
= 4.5 Vdc,
= 4.5 Vdc)
= 4.5 Vdc)
= 6.0 W)
= 6.0 W)
= 6.0 W)
= 6.0 W)
D
D
D
D
D
D
GS
= 4.0 Adc,
= 1.2 Adc,
= 6.0 Adc,
= 2.4 Adc,
= 4.0 Adc,
= 2.0 Adc,
= 0 Vdc,
http://onsemi.com
2
V
Symbol
R
R
V
(BR)DSS
t
t
t
t
I
C
I
DS(on)
DS(on)
GS(th)
C
C
g
d(on)
d(off)
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
FS
oss
t
t
t
t
rss
iss
r
f
r
f
T
1
2
3
Polarity
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(N)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
(P)
−
0.07
Min
0.6
0.6
0.1
3.0
3.0
20
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.028
0.033
4.75
Typ
785
540
210
215
100
0.9
0.9
6.0
1.5
1.5
4.0
5.0
3.0
3.0
75
11
15
35
40
45
35
60
35
12
10
50
35
45
33
80
29
12
10
−
−
−
−
−
−
−
0.043
0.048
1100
Max
0.13
100
750
450
325
180
175
130
110
1.0
1.0
1.2
1.2
0.1
18
65
75
20
20
90
65
75
60
55
20
18
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
nC
pF
ns
W
W