MMDF2C03HDR2 ON Semiconductor, MMDF2C03HDR2 Datasheet - Page 6

• Manufacturer Part Number: MMDF2C03HDR2
• Description: MOSFET N/P-CH 30V 3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2C03HDR2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A, - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 23 ns, 194 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 18 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMDF2C03HDR2OSTR

1000
12
1200
1000
100
9
6
3
0
800
600
400
200
10
0
Figure 8. Gate−To−Source and Drain−To−Source
1
0
1
10
Q1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
I
V
T
C
C
D
J
DD
GS
Q3
iss
rss
= 3 A
= 25°C
V
= 15 V
= 10 V
Figure 9. Resistive Switching Time
DS
5
2
Variation versus Gate Resistance
V
V
GS
= 0 V V
Voltage versus Total Charge
DS
Figure 7. Capacitance Variation
Q2
Q
0
R
g
G
, TOTAL GATE CHARGE (nC)
4
GS
t
, GATE RESISTANCE (OHMS)
V
t
d(on)
d(off)
DS
= 0 V
t
t
r
f
N−Channel
5
QT
6
10
10
15
8
V
GS
I
T
D
C
C
C
J
rss
= 3 A
oss
20
= 25°C
iss
10
T
J
http://onsemi.com
25
= 25°C
MMDF2C03HD
12
100
24
18
6
12
0
30
6
1000
100
1200
1000
10
12
10
800
600
400
200
1
8
6
4
2
0
0
1
0
10
Figure 8. Gate−To−Source and Drain−To−Source
Q1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
I
V
T
C
C
D
J
DD
GS
rss
iss
= 2 A
= 25°C
Q3
= 15 V
= 10 V
V
2
DS
5
V
V
Figure 9. Resistive Switching Time
DS
Variation versus Gate Resistance
= 0 V V
GS
Figure 7. Capacitance Variation
Q2
Voltage versus Total Charge
t
4
d(off)
R
0
Q
G
, GATE RESISTANCE (OHMS)
g
t
GS
f
, TOTAL GATE CHARGE (nC)
V
DS
= 0 V
6
5
C
P−Channel
rss
QT
C
10
8
10
oss
C
iss
10
15
V
GS
12
20
I
T
D
J
= 2 A
= 25°C
T
14
t
J
t
r
d(on)
25
= 25°C
100
16
30
24
20
16
12
8
4
0