MMDF2C03HDR2 ON Semiconductor, MMDF2C03HDR2 Datasheet - Page 2

• Manufacturer Part Number: MMDF2C03HDR2
• Description: MOSFET N/P-CH 30V 3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2C03HDR2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A, - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 23 ns, 194 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 18 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMDF2C03HDR2OSTR

3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 5)
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Drain−to−Source On−Resistance
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
DS
GS
GS
GS
GS
= 0 Vdc, I
= 30 Vdc, V
= V
= 3.0 Vdc, I
= 3.0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 4.5 Vdc, I
= 4.5 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
D
= 250 mAdc)
GS
D
D
= 3.0 Adc)
= 2.0 Adc)
= 1.5 Adc)
= 1.0 Adc)
= 1.5 Adc)
= 1.0 Adc)
= 0 Vdc)
Characteristic
GS
= ± 20 Vdc, V
(V
(V
(V
(V
(V
(V
(V
V
V
V
V
DS
GS
GS
DD
DD
DD
GS
DD
GS
DS
DS
= 24 Vdc, V
= 4.5 Vdc, R
= 4.5 Vdc, R
= 10 Vdc, I
(T
= 15 Vdc, I
= 15 Vdc, I
= 15 Vdc, I
= 10 Vdc, R
= 15 Vdc, I
= 10 Vdc, R
= 24 Vdc, I
V
V
A
f = 1.0 MHz)
GS
GS
= 25°C unless otherwise noted) (Note 3)
= 10 Vdc)
= 10 Vdc)
DS
= 0)
D
D
D
D
D
D
GS
G
G
G
G
= 2.0 Adc,
= 3.0 Adc,
= 2.0 Adc,
= 3.0 Adc,
= 2.0 Adc,
= 3.0 Adc,
= 9.1 W)
= 6.0 W)
= 9.1 W)
= 6.0 W)
= 0 Vdc,
http://onsemi.com
MMDF2C03HD
2
V
Symbol
R
R
V
(BR)DSS
t
t
t
t
I
I
C
GS(th)
DS(on)
DS(on)
C
C
g
d(on)
d(off)
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
oss
t
t
FS
t
t
iss
rss
r
f
r
f
T
1
2
3
Polarity
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
(N)
(P)
−
−
Min
1.0
1.0
2.0
2.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.065
0.225
0.06
0.17
11.5
14.2
Typ
450
397
160
189
194
192
1.7
1.5
3.6
3.4
8.0
9.0
1.5
1.1
3.5
4.5
2.8
3.5
35
64
12
16
65
18
16
63
19
15
10
30
81
23
−
−
−
−
0.070
0.200
0.075
0.300
Max
100
630
550
225
250
126
130
126
390
162
384
1.0
1.0
3.0
2.0
70
24
32
36
32
38
16
18
30
20
60
46
16
19
−
−
−
−
−
−
−
−
−
mhos
mAdc
nAdc
Unit
Vdc
Vdc
nC
pF
ns
W
W