MMDF2C03HDR2 ON Semiconductor, MMDF2C03HDR2 Datasheet - Page 4

• Manufacturer Part Number: MMDF2C03HDR2
• Description: MOSFET N/P-CH 30V 3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF2C03HDR2

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 24V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.07 Ohms
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A, - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 23 ns, 194 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 65 ns, 18 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMDF2C03HDR2OSTR

0.08
0.07
0.06
0.05
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
−50
0
0
0
2
Figure 4. On−Resistance versus Drain Current
T
J
= 25°C
V
I
−25
Figure 5. On−Resistance Variation with
D
GS
3
= 1.5 A
0.5
= 10 V
V
Figure 3. On−Resistance versus
GS
I
T
D
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 1.5 A
= 25°C
0
T
4
Gate−To−Source Voltage
J
, JUNCTION TEMPERATURE (°C)
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
1
25
5
Temperature
N−Channel
V
GS
10 V
1.5
50
6
= 4.5
TYPICAL ELECTRICAL CHARACTERISTICS
75
7
2
100
8
2.5
125
9
http://onsemi.com
MMDF2C03HD
150
10
3
4
0.30
0.25
0.20
0.15
0.10
0.8
0.6
1.6
1.4
1.2
1.0
0.6
0.5
0.4
0.3
0.2
0.1
−50
0
0
0
V
I
D
Figure 4. On−Resistance versus Drain Current
GS
= 2 A
− 25
T
1
I
J
T
0.5
= 10 V
D
J
Figure 5. On−Resistance Variation with
= 25°C
= 1 A
= 25°C
V
Figure 3. On−Resistance versus
GS
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
0
1
J
Gate−To−Source Voltage
, JUNCTION TEMPERATURE (°C)
I
3
D
, DRAIN CURRENT (AMPS)
1.5
25
and Gate Voltage
4
Temperature
P−Channel
50
5
2
V
GS
6
75
2.5
= 4.5 V
10 V
7
100
3
8
125
3.5
9
150
10
4