BSO207P H Infineon Technologies, BSO207P H Datasheet - Page 6

• Manufacturer Part Number: BSO207P H
• Description: MOSFET 2P-CH 20V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 44µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 45.0 mOhm
• Rds (on) (max) (@2.5v): 70.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
DS
=f(T
60
55
50
45
40
35
30
25
20
4
3
2
); V
-60
0
j
); I
GS
D
=0 V; f =1 MHz
= -5.7 A; V
-20
5
20
- V
GS
98 %
T
= -4.5 V
DS
j
10
[°C]
typ
60
[V]
100
15
Crss
Coss
Ciss
140
page 6
20
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
=f(T
SD
1
0
-1
2
1
0
-60
)
0
j
); V
j
GS
-20
150 °C
=V
0.5
150 °C, 98%
DS
20
; I
D
25 °C, 98%
25 °C
= -44 µA
V
T
SD
j
60
[°C]
1
[V]
100
1.5
BSO207P H
140
2010-01-21
180
2