BSO207P H Infineon Technologies, BSO207P H Datasheet - Page 4

• Manufacturer Part Number: BSO207P H
• Description: MOSFET 2P-CH 20V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 44µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 45.0 mOhm
• Rds (on) (max) (@2.5v): 70.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
10
10
2
1
0
DS
-1
2
1
0
A
10
0
); T
); t
-1
p
A
p
≤10 s
=25 °C
limited by on-state
resistance
40
2)
; D =0
10
0
T
V
A
DS
80
10 s
[°C]
[V]
100 ms
1 ms
10 ms
100 µs
10
1
120
160
10
page 4
2
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
6.5
5.5
4.5
3.5
2.5
1.5
0.5
10
10
10
10
10
A
6
5
4
3
2
1
0
-1
-2
); t
2
1
0
10
0
p
)
2)
-6
p
0.5
≤10 s
0.05
0.02
0.01
0.2
0.1
GS
10
-5
p
= 4.5 V
/T
40
10
-4
single pulse
10
-3
T
t
A
10
p
80
[°C]
[s]
-2
10
-1
120
10
BSO207P H
0
10
1
2010-01-21
160
10
2