BSO207P H Infineon Technologies, BSO207P H Datasheet - Page 3

• Manufacturer Part Number: BSO207P H
• Description: MOSFET 2P-CH 20V 5A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO207P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 44µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 45.0 mOhm
• Rds (on) (max) (@2.5v): 70.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.3
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
V
R
V
V
V
T
V
T
V
di
page 3
A
j
GS
DD
GS
DD
GS
DD
GS
R
G
=25 °C
F
=25 °C
=10 V, I
/dt =100 A/µs
=1.6 Ω
=0 V, V
=-10 V,
=4.5 V, I
=-10 V, I
=0 to 4.5 V
=-10 V, V
=0 V, I
F
F
DS
=-5.7 A,
=I
D
D
=15 V,
=-5.7 A,
GS
=-5.7 A,
S
,
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1100
typ.
380
310
-1.7
-12
6.2
22
33
35
-2
-2
-5
-5
9
7
-
-
-
max.
1650
BSO207P H
-2.5
-2.2
-1.1
570
465
-16
-23
14
33
50
53
-3
-3
-7
-7
9
-
Unit
pF
ns
nC
V
nC
A
V
nC
2010-01-21