UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet - Page 9

• Manufacturer Part Number: UPA1890GR-9JG-E2-A
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1890GR-9JG-E2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 748pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

B) P-Channel
100
80
60
40
20
20
15
10
5
0
0
3
2
1
0
50
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
V
I
D
Pulsed
DS
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
= 1 mA
= 10 V
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
T
GS
0.2
T
DS
ch
A
0
= 10 V
- Drain to Source Voltage - V
- Ambient Temperature - ˚C
- Channel Temperature -˚C
60
0.4
50
90
0.6
100
120
4.0 V
4.5 V
0.8
Data Sheet G14762EJ2V0DS
150
150
1.0
0.00001
0.0001
0.001
0.01
100
0.01
0.01
100
100
0.1
0.1
10
0.1
10
10
1
1
0.01
0.1
1
0
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
P
V
V
D
T
DS
FORWARD BIAS SAFE OPERATING AREA
(FET1):P
DS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
A
= 10 V
= 25˚C
= 10 V
125˚C
V
TRANSFER CHARACTERISTICS
V
25˚C
75˚C
DS
GS
D
(FET2) = 1:1
0.1
- Drain to Source Voltage - V
- Gate to Source Voltage - V
1
I
D
1
- Drain Current - A
2
2
1
T
A
10
= 25˚C
125˚C
25˚C
75˚C
3
10
PA1890
100
100
4
7